Here we describe a uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9%, the fabricated through a conventional catalytic bottom-up growth paradigm employing innovative catalysts and precursors. Optical characterization by means of temperature dependent photoluminescence is used to identify transition point from indirect to direct badgap of GeSn nanowires.
Dzianis Saladukha, Jessica Doherty, Subhajit Biswas, Tomasz J. Ochalski, and Justin D. Holmes, "Optical study of strain-free GeSn nanowires," Proc. SPIE 10108, Silicon Photonics XII, 101081C (Presented at SPIE OPTO: February 02, 2017; Published: 20 February 2017); https://doi.org/10.1117/12.2252628.
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