In this work we present latest achievements on gain chips as sources for single-frequency tunable laser absorption spectroscopy and sensing. External cavity lasers based on Brolis Semiconductors (2.05 – 2.45) μm wavelengths GaSb gain chips exhibited single mode laser emission with linewidths <100 kHz and output powers of <5 mW in the entire tuning range of <100 nm per chip. Continuous current tuning of 60 GHz and mode-hop free piezo tuning of 26 GHz were demonstrated. Additionally, we report on extended wavelengths range by demonstrating low spectral modulation 850 nm GaAs-based gain chips. Finally, experimental results on GaSb-based gain chip integration with silicon photonics are presented.
Ieva Šimonytė, Laurynas Andrulionis, Justinas Aleknavičius, Greta Naujokaitė, Edgaras Dvinelis, Augustinas Trinkūnas, Mindaugas Greibus, Augustinas Vizbaras, and Kristijonas Vizbaras, "Single-frequency infrared tunable lasers with single-angle-facet gain chips for sensing applications," Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101110H (Presented at SPIE OPTO: January 29, 2017; Published: 27 January 2017); https://doi.org/10.1117/12.2250725.
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