We studied the Ga-free InAs/InAsSb type-II superlattice (T2SL) period, thickness and antimony composition, in order to define an optimized structure suitable for detection of the full mid-wavelength infrared domain (MWIR). The SL structures were fabricated by MBE on n-type GaSb substrates and exhibited cut-off wavelengths between 5μm and 5.5μm at 150K. The growth procedure used to achieve strain-balanced structures is reported and first structural and optical results, made of high-resolution Xray diffraction pattern, AFM image scan, photoluminescence (PL) and time resolved photoluminescence measurements (TRPL), are presented and analyzed.
Q. Durlin, J. P. Perez, R. Rossignol, J. B. Rodriguez, L. Cerutti, B. Delacourt, J. Rothman, C. Cervera, and P. Christol, "InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain," Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011112 (Presented at SPIE OPTO: January 31, 2017; Published: 27 January 2017); https://doi.org/10.1117/12.2250908.
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