The extreme light confinement provided by nanophotonic structures pushes toward revisiting the photodetector design. On the other hand introducing absorbing layers in nano-resonators demands dedicated electromagnetic design. This context opens the way for performance improvements and new functionalities, introducing the fourth generation of photo-detectors with promising features such as ultra-thin absorbing layers, device area much smaller than its optical cross-section and carved optical response. In this talk, I present a GMR InGaAs photo-detector dedicated for FPA applications, illustrating this global design and the cross-linked properties of the optical and semiconductor structures.
In this "guided mode resonator", the semiconductor stack works as an optical guide. Its bottom part is structured in order to generate the first order diffraction modes in the semiconductor. Adjusting the coupling between the optical modes of the guide and those of the grating, allows optimizing this structure for various applications as optimum absorption at 1.55 μm or in the SWIR band [M. Verdun et al, Appl. Phys. Lett. 108 053501 (2016)].
The photodiode is based on an InP/InGaAs double heterojunction. The small thickness of the InGaAs absorbing layer (100 – 200 nm) allows suppressing the diffusion currents as well as reducing the generation-recombination currents in the space charge layer. It will be shown that the minimum value of the dark current is not necessarily reached for the thinnest absorbing layers.
As a result, experimental data show at λ = 1.55 μm an external quantum efficiency of 75% and a specific detectivity of up to 1013 cm.√Hz.W-1.
Jean-Luc Pelouard, "InGaAs-based resonant photodetector: a step towards a new generation (Conference Presentation)," Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101111T (Presented at SPIE OPTO: February 01, 2017; Published: 28 April 2017); https://doi.org/10.1117/12.2252699.5394049045001.
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