We present magnetooptical and transport properties of metamorphic periodic structures containing InAsSb layers with controllable modulated Sb composition . The modulation period is determined by the thicknesses of the strain compensated InAsSbx/InAsSby pairs grown on a virtual AlGaInSb substrate with a lattice constant of 6.25 A. We demonstrate that the bandgap energy of ordered InAsSb0.3/InAsSb0.75 alloy varies from 100mev to a few meV as a result of the well-regulated variation of the modulation period from ∼3 to ∼7.5 nm. The material effective masses and the specific character of the energy spectra will be discussed.
1. G. Belenky, Y. Lin, L. Shterengas, D. Donetsky, G. Kipshidze and S. Suchalkin, Electron. Lett. 51 (19), 1521, (2015)
Sergey Suchalkin, Gregory Belenky, Leon Shterengas, Boris Laykhtman, Gela Kipshidze, Maxim Ermolaev, Dmitry Smirnov, Jonathan Ludwig, Seongphill Moon, David Graf, Stefan P. Svensson, and Wendy L. Sarney, "Properties of novel metamorphic III-V materials with ultra-low bandgaps (Conference Presentation)," Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101112U (Presented at SPIE OPTO: February 02, 2017; Published: 28 April 2017); https://doi.org/10.1117/12.2251362.5393916900001.
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