In this paper, we discuss recent progress obtained on infrared nanocrystal based on mercury chalcogenides (HgTe and HgSe). These materials can become some key building blocks for the next generation of infrared optoelectronic devices. To reach this goal, the infrared nanocrystals need to combine fine control on the optical features and efficient electronic transport. Here, we report about (i) the development of HgTe NPL for enhanced optical features (narrower and faster PL) in the near IR and (ii) about the development of self-doped nanocrystals of HgSe to demonstrate tunable intraband absorption up to the THz range.
Clement Livache, Bertille Martinez, Eva Izquierdo, Marion Dufour, Herve Cruguel, Sebastien Royer, Xian Zhen Xu, Sandrine Ithurria, and Emmanuel Lhuillier, "Shape and confinement control in mid and far infrared nanocrystals," Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 101140B (Presented at SPIE OPTO: January 31, 2017; Published: 20 February 2017); https://doi.org/10.1117/12.2250160.
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