We are reporting the first successful fabrication of 850-nm buried tunnel junction (BTJ) VCSELs. Multiple parameters were considered for the design. First, n-type dopants other than silicon had to be considered for an abrupt junction. Second, proper layer thickness had to be chosen. Finally, compatibility with regrowth and processing had to be ensured. In this paper the successful fabrication and performance of 850-nm BTJ VCSELs with tunnel junctions comprised of GaAs and AlGaAs materials is demonstrated. Key achieved parameters include a significant improvement in the slope efficiency from approximately 0.45 W/A in an oxide-aperture VCSEL to over 0.6 W/A.
P. S. Wong, J. Yan, T. C. Wu, W. Kyi, J. Pao, and M. Riaziat, "Tunnel junction 850-nm VCSEL for aperture uniformity and reliability," Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220B (Presented at SPIE OPTO: February 02, 2017; Published: 25 February 2017); https://doi.org/10.1117/12.2253053.
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