Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recently, Fabry-Perot Quantum Cascade Lasers integrated on silicon provided a 4800 nm light source for MIR silicon photonic applications. Distributed feedback (DFB) lasers are appealing for many high-sensitivity chemical spectroscopic sensing applications that require a single frequency, narrow-linewidth MIR source. While heterogeneously integrated 1550 nm DFB lasers have been demonstrated by introducing a shallow surface grating on a silicon waveguide within the active region, no mid-infrared DFB laser on silicon had previously been reported. Here we demonstrate quantum cascade DFB lasers heterogeneously integrated with silicon-on-nitride-oninsulator (SONOI) waveguides. These lasers emit over 200 mW of pulsed power at room temperature and operate up to 100 °C. Although the output is not single mode, the DFB grating nonetheless imposes wavelength selectivity with 22 nm of thermal tuning.
Alexander Spott, Jon Peters, Michael L. Davenport, Eric J. Stanton, Chong Zhang, William W. Bewley, Charles D. Merritt, Igor Vurgaftman, Chul Soo Kim, Jerry R. Meyer, Jeremy Kirch, Luke J. Mawst, Dan Botez, and John E. Bowers, "Quantum cascade lasers on silicon," Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230I (Presented at SPIE OPTO: January 31, 2017; Published: 20 February 2017); https://doi.org/10.1117/12.2248760.
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