Nanoscale lasers are the key component in the integrated photonics chips and have attracted much interests. Nanoblets and nanowires lasers, as one of the candidates for the nanoscale lasers, have been developed for one more decades. Many kinds of nanowire lasers with different functionalities, such as wavelength tunable, single mode, polarized emission and so on, have been demonstrated. However, the reported single mode nanowire lasers are mostly realized through microfabrication process, careful manipulation and complicated structures. Here, we present a new type of lateral emission single mode nanobelt lasers with high polarization ratio which are fabricated by the one step traditional VLS (Vapor Liquid Solid) growth. Different from the traditional nanobelt lasers which are based on the FP cavity formed in the longitudinal direction, the emission of this novel nanoblet laser is lateral which is contribute to the special wire-like structures grown on the nanobelt. It shows band edge emission and the wavelength is centered at 712.6 nm with linewidth about 0.18 nm. The threshold reach as low as 15 uJ/cm2 benefit from the unique morphology which provides enhanced confinement factor for optical modes. Meanwhile the laser emission is highly polarized with polarization ration as high as 0.91. This lateral emission single mode nanobelt laser with high polarization ratio, low threshold and simple fabrication technique offers an economic and effective choice to the future optical applications.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon