Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Two-step ridge waveguide design with shallow 5-μm-wide and deep 15-μm-wide etched sections yielded λ ~ 2 μm lasers generating 250 mW of continuous wave output power in nearly diffraction limited beam when mounted epi-down. The same device mounted epi-up demonstrated output power of about 180 mW. Lasers operating in the wavelength range above 3.2 μm with variable deep etched ridge width and two-step ridge design were fabricated and characterized. Two-step ridge waveguide design yielded the lowest threshold current and the highest slope efficiency. Tens of mW of continuous wave output power was obtained in nearly diffraction limited beams in the wavelength range from 3.2 to 3.3 μm near and above 20 °C in both epi-up and epi-down mounting configurations. Laterally-coupled 2-nd-order distributed feedback lasers operated near 3.22 μm in continuous wave regime at room temperatures with more than 10 mW of output power at room temperature in epi-up mounted configuration.
L. Shterengas, T. Hosoda, M. Wang, T. Feng, G. Kipshidze, and G. Belenky, "High-power 1.9-3.3-μm type-I quantum-well cascade diode lasers," Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230P (Presented at SPIE OPTO: February 01, 2017; Published: 20 February 2017); https://doi.org/10.1117/12.2251229.
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