Focused ion beam milling was used to fabricate on-chip unstable resonator cavity quantum well laser devices. A cylindrical mirror was formed at the back facet of the broad area device emitting near 2 μm. Compared to the Fabry-Pérot cavity device, the unstable resonator cavity device exhibits a 2x diffraction limited beam. The preliminary results demonstrate that a much higher brightness can be reached in this class of broad area devices.
Chi Yang, Alan H. Paxton, Chunte A. Lu, Timothy C. Newell, and Ron Kaspi, "On-chip unstable resonator cavity 2-um quantum well lasers," Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231D (Presented at SPIE OPTO: February 02, 2017; Published: 20 February 2017); https://doi.org/10.1117/12.2249696.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon