Graphene has been touted as an ideal material for GaN LED transparent conductive layers due its high optical transparency and high electron mobility. However, many issues exist with graphene-LED integration. These include contamination from metal catalysts and manual transfer; graphene material non-uniformities over large (wafer-scale) areas; incompatibility with LED device processing; and high manufacturing costs for large-areas of material. In this work, we demonstrate graphene as a transparent contact layer for GaN LEDs which solves all of these issues. Our results prove zero contamination, with excellent material uniformity and full LED processing compatibility. Thus, we have for the first time shown a graphene fabrication process suitable for industrial GaN LED integration.
Ivor Guiney, Simon Thomas, and Colin J. Humphreys, "Single-step manufacturing process for the production of graphene-V/III LED heterostructures," Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240D (Presented at SPIE OPTO: January 31, 2017; Published: 22 February 2017); https://doi.org/10.1117/12.2250166.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the proceedings. They include the speaker's narration with video of the slides and animations. Most include full-text papers. Interactive, searchable transcripts and closed captioning are now available for 2018 presentations, with transcripts for prior recordings added daily.
Search our growing collection of more than 16,000 conference presentations, including many plenaries and keynotes.