This paper demonstrates that when InGaN LEDs are submitted to a constant reverse bias, they can show a time-dependent breakdown, that leads to the catastrophic failure of the devices. By submitting green and blue LEDs to constant voltage stress in the range between -40 V and -60 V we demonstrate that: (i) under reverse bias conditions, current is focused on localized paths, whose positions can be identified by electroluminescence measurements, and that originate from the presence of extended defects; (ii) during a constant voltage stress, the reverse current of the LEDs gradually increases; (iii) for longer stress times, all devices show a time-dependent breakdown; (iv) time-to-failure has an exponential dependence on stress voltage, and is Weibull-distributed.
Carlo De Santi, Matteo Meneghini, Nicola Renso, Matteo Buffolo, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Andrea Migliori, Vittorio Morandi, Gaudenzio Meneghesso, and Enrico Zanoni, "Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress," Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240F (Presented at SPIE OPTO: January 31, 2017; Published: 16 February 2017); https://doi.org/10.1117/12.2256023.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon