GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.
P. Bhattacharya, A. Hazari, and S. Jahangir, "InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon," Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240H (Presented at SPIE OPTO: January 31, 2017; Published: 16 February 2017); https://doi.org/10.1117/12.2252981.
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