Efficiency droop and the green gap are challenges to InGaN/GaN light emitting diodes (LEDs). Defects have been suggested to contribute to both effects, so understanding the origin of defects and their impact on LED performance is important to improving efficiency. This talk describes the use of deep level optical spectroscopy (DLOS) to characterize deep level defects in quantum well (QW) and quantum barrier (QB) regions of InGaN LEDs. The spatial dependence of deep level defect density in the MQW region and the evolution of QW deep level defects with indium alloying will be discussed.
Andrew M. Armstrong, Mary H. Crawford, Daniel D. Koleske, Erik C. Nelson, Isaac Wildeson, and Parijat Deb, "Spatial and compositional dependence of deep-level defects in InGaN LEDs (Conference Presentation)," Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240W (Presented at SPIE OPTO: February 01, 2017; Published: 20 April 2017); https://doi.org/10.1117/12.2252683.5398643888001.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 14,000 conference presentations, including many plenary and keynote presentations.
Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon