In this article the recent progress in the elements of EUV lithography is presented. Source power around 205W was demonstrated and further scaling up is going on, which is expected to be implemented in the field within 2017. Source availability keeps improving especially due to the introduction of new droplet generator but collector lifetime needs to be verified at each power level. Mask blank defect satisfied the HVM goal. Resist meets the requirements of development purposes and dose needs to be reduced further to satisfy the productivity demand. Pellicle, where both the high transmittance and long lifetime are demanded, needs improvements especially in pellicle membrane. Potential issues in high-NA EUV are discussed including resist, small DOF, stitching, mask infrastructure, whose solutions need to be prepared timely in addition to high-NA exposure tool to enable this technology.
Seong-Sue Kim, Roman Chalykh, Hoyeon Kim, Seungkoo Lee, Changmin Park, Myungsoo Hwang, Joo-On Park, Jinhong Park, Hocheol Kim, Jinho Jeon, Insung Kim, Donggun Lee, Jihoon Na, Jungyeop Kim, Siyong Lee, Hyunwoo Kim, and Seok-Woo Nam, "Progress in EUV lithography toward manufacturing," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014306 (Presented at SPIE Advanced Lithography: February 27, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2264043.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon