EUV (extreme ultraviolet) lithography is one of the most promising candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap. Though polymer type CAR (chemically amplified resist) is the currently standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, recent progress in nanoparticle photoresists which Cornell University has intensely studied is discussed. Lithography performance, especially scum elimination, improvement studies with the dissolution rate acceleration concept and new metal core applications are described.
Kazuki Kasahara, Hong Xu, Vasiliki Kosma, Jeremy Odent, Emmanuel P. Giannelis, and Christopher K. Ober, "Nanoparticle photoresist studies for EUV lithography," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014308 (Presented at SPIE Advanced Lithography: February 27, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2258187.
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