Pure thin-films of unimolecular organometallic photoresists were lithographically evaluated using extreme ultraviolet light (EUV, λ = 13.5 nm) and developed using solutions containing carboxylic acids. Optimization of development solutions used with a cobalt-oxalate EUV resist (NP1, 2) led to a switch in lithographic tone from negative to positive. Additional optimization led to an improvement in top loss (35 to 7%) with development in cyclohexanone and 2-butanone, respectively. We saw a drastic improvement in photo-speed (Emax = 5 mJ/cm2) and contrast of the negative-tone imaging with development in certain acidic solutions. Additionally, carboxylic acid solutions provide excellent development conditions for resists that we, in the past, have been unable to successfully develop.
Jodi Hotalen, Michael Murphy, William Earley, Michaela Vockenhuber, Yasin Ekinci, Daniel A. Freedman, and Robert L. Brainard, "Advanced development techniques for metal-based EUV resists," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014309 (Presented at SPIE Advanced Lithography: February 27, 2017; Published: 31 March 2017); https://doi.org/10.1117/12.2258126.
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