An optimal mix-match control strategy for EUV and 193i scanners is crucial for the insertion of EUV lithography at 7nm technology node. The systematic differences between these exposure systems introduce additional cross-platform mixmatch overlay errors. In this paper, we quantify the EUV specific contributions to mix-match overlay, and explore the effectiveness of higher-order interfield and intrafield corrections on minimizing the on-product mix-match overlay errors. We also analyze the impact of intra-field sampling plans in terms of model accuracy and adequacy in capturing EUV specific intra-field signatures. Our analysis suggests that more intra-field measurements and appropriate placement of the metrology targets within the field are required to achieve the on-product overlay control goals for N7 HVM.
Xuemei Chen, Allen Gabor, Pavan Samudrala, Sheldon Meyers, Erik Hosler, Richard Johnson, and Nelson Felix, "Mix-and-match considerations for EUV insertion in N7 HVM," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430F (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2258674.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon