In 5nm node, even minor process variation in extreme ultraviolet lithography (EUVL) can bring significant impact to the device performance. Except for the overlay and critical dimension uniformity (CDU), EUV specific effects, such as shadowing, three-dimensional mask effect (M3D), and stochastic effects, must also be understood in processing, modeling, and optical proximity correction (OPC). We simulate those variabilities using a calibrated model and compare it to what is observed on the wafer. The interconnect path of Metal1-Via1-Metal2 is studied by using a silicon-calibrated resistivity model to analyze the related overlap area and the electrical resistance. The approach allows us to quantify the impact of EUVL process by investigating the individual contribution of each patterning process variations.
Weimin Gao, Victor Blanco, Vicky Philipsen, Itaru Kamohara, Yves Saad, Ivan Ciofi, Lawrence S. Melvin, Eric Hendrickx, Vincent Wiaux, and Ryoung Han Kim, "Modeling EUVL patterning variability for metal layers in 5nm technology node and its effect on electrical resistance," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430I (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2259964.
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