We report on the printability, mitigation and actinic mask level review of programmed substrate blank pit and bump defects in a EUV lithography test mask. We show the wafer printing behavior of these defects exposed with an NXE:3300 EUV lithography scanner and the corresponding mask level actinic review using the AIMSTM tool. We will show which categories of these blank substrate defects print on wafer and how they can be mitigated by hiding these defects under absorber lines. Furthermore we show that actinic AIMSTM mask review images of these defects, in combination with a simple thresholded resist transfer model, can accurately predict their wafer printing profiles. We also compare mask level actinic AIMSTM to top down mask SEM review in their ability to detect these defects.
Erik Verduijn, Pawitter Mangat, Obert Wood, Jed Rankin, Yulu Chen, Francis Goodwin, Renzo Capelli, Sascha Perlitz, Dirk Hellweg, Ravi Bonam, Shravan Matham, Nelson Felix, and Daniel Corliss, "Printability and actinic AIMS review of programmed mask blank defects," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430K (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2260053.
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