In this paper we compare two non-interferometric wavefront sensors suitable for in-situ high-NA EUV optical testing. The first is the AIS sensor, which has been deployed in both inspection and exposure tools. AIS is a compact, optical test that directly measures a wavefront by probing various parts of the imaging optic pupil and measuring localized wavefront curvature. The second is an image-based technique that uses an iterative algorithm based on simulated annealing to reconstruct a wavefront based on matching aerial images through focus. In this technique, customized illumination is used to probe the pupil at specific points to optimize differences in aberration signatures.
Ryan Miyakawa, Chris Anderson, and Patrick Naulleau, "High-NA metrology and sensing on Berkeley MET5," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430N (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 27 March 2017); https://doi.org/10.1117/12.2261893.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon