Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.
Carmen Popescu, Andreas Frommhold, Alexandra McClelland, John Roth, Yasin Ekinci, and Alex P. G. Robinson, "Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430V (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2258098.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon