This paper summarizes findings on the iN7 platform (foundry N5 equivalent) for single exposure EUV (SE EUV) of M1 and M2 BEOL layers. Logic structures within these layers have been measured after litho and after etch, and variability was characterized both with conventional CD-SEM measurements as well as Hitachi contouring method. After analyzing the patterning of these layers, the impact of variability on potential interconnect reliability was studied by using MonteCarlo and process emulation simulations to determine if current litho/etch performance would meet success criteria for the given platform design rules.
V. M. Blanco Carballo, J. Bekaert, M. Mao, B. Kutrzeba Kotowska, S. Larivière, I. Ciofi, R. Baert, R. H. Kim, E. Gallagher, E. Hendrickx, L. E. Tan, W. Gillijns, D. Trivkovic, P. Leray, S. Halder, M. Gallagher, F. Lazzarino, S. Paolillo, D. Wan, A. Mallik, Y. Sherazi, G. McIntyre, M. Dusa, P. Rusu, T. Hollink, T. Fliervoet, and F. Wittebrood, "Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014318 (Presented at SPIE Advanced Lithography: March 02, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2258005.
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