Inpria has developed a directly patternable metal oxide hard-mask as a high-resolution photoresist for EUV lithography1. In this contribution, we describe a Tachyon 2D OPC full-chip model for an Inpria resist as applied to an N7 BEOL block mask application.
Adam Lyons, David Rio, Sook Lee, Thomas Wallow, Maxence Delorme, Anita Fumar-Pici, Michael Kocsis, Peter de Schepper, Michael Greer, Jason K. Stowers, Werner Gillijns, Danilo De Simone, and Joost Bekaert, "Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431E (Presented at SPIE Advanced Lithography: March 02, 2017; Published: 27 March 2017); https://doi.org/10.1117/12.2260441.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon