Wafer overlay errors due to EUV mask non-flatness and thickness variations need to be minimized for the successful deployment of EUV lithography at N7 HVM. In this paper, we provide an updated assessment of the overlay impacts from EUV mask blanks as relevant to N7. We then evaluate the effectiveness of high-order scanner correction and mask compensation in minimizing the mask blank induced overlay to meet the allocated N7 overlay budget. Various scenarios for combining the compensation methods are evaluated, and a practical EUV mask flatness and thickness variation specification for N7 production is proposed.
Xuemei Chen, Christina Turley, Jed Rankin, Tim Brunner, and Allen Gabor, "Minimizing wafer overlay errors due to EUV mask non-flatness and thickness variations for N7 production," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431F (Presented at SPIE Advanced Lithography: March 02, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2258642.
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