One of technical issues of directed self-assembly lithography is extremely narrow patterning range. It is really difficult to make not only smaller patterns (pitch of less than 30nm) because of self-assembling limit but also middle patterns (pitch of more than 60nm) because of material synthesis issues. This paper describes wide–range directed self-assembly lithography which enables not only narrow patterns but also wide patterns using newly developed block copolymer. One block of the new block copolymer is easily metalized selectively by metalize technology and it is confirmed that dry etching resistance is markedly improved.
Seiji Morita, Ryuichi Saito, Ryosuke Yamamoto, Norikatsu Sasao, Tomoaki Sawabe, Koji Asakawa, and Shinobu Sugimura, "Wide-range directed self-assembly lithography enabling wider range of applicable pattern size for both hexagonal multi-hole and line/space," Proc. SPIE 10144, Emerging Patterning Technologies, 101440R (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 28 March 2017); https://doi.org/10.1117/12.2257987.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 14,000 conference presentations, including many plenary and keynote presentations.