One of technical issues of directed self-assembly lithography is extremely narrow patterning range. It is really difficult to make not only smaller patterns (pitch of less than 30nm) because of self-assembling limit but also middle patterns (pitch of more than 60nm) because of material synthesis issues. This paper describes wide–range directed self-assembly lithography which enables not only narrow patterns but also wide patterns using newly developed block copolymer. One block of the new block copolymer is easily metalized selectively by metalize technology and it is confirmed that dry etching resistance is markedly improved.
Seiji Morita, Ryuichi Saito, Ryosuke Yamamoto, Norikatsu Sasao, Tomoaki Sawabe, Koji Asakawa, and Shinobu Sugimura, "Wide-range directed self-assembly lithography enabling wider range of applicable pattern size for both hexagonal multi-hole and line/space," Proc. SPIE 10144, Emerging Patterning Technologies, 101440R (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 28 March 2017); https://doi.org/10.1117/12.2257987.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon