Overlay control based on DI metrology of optical targets has been the primary basis for run-to-run process control for many years. In previous work we described a scenario where optical overlay metrology is performed on metrology targets on a high frequency basis including every lot (or most lots) at DI. SEM based FI metrology is performed ondevice in-die as-etched on an infrequent basis. Hybrid control schemes of this type have been in use for many process nodes. What is new is the relative size of the NZO as compared to the overlay spec, and the need to find more comprehensive solutions to characterize and control the size and variability of NZO at the 1x nm node: sampling, modeling, temporal frequency and control aspects, as well as trade-offs between SEM throughput and accuracy.
Honggoo Lee, Sangjun Han, Jaeson Woo, DongYoung Lee, ChangRock Song, Hoyoung Heo, Irina Brinster, DongSub Choi, and John C. Robinson, "High-volume manufacturing device overlay process control," Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450D (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 28 March 2017); https://doi.org/10.1117/12.2257836.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon