After critical lithography steps, overlay and CD are measured to determine if the wafers need to be re-worked. Traditionally, overlay metrics are applied per X/Y-direction and, a CD metric is computed independently. From design standpoint, electrical failure is based on a complex interaction between CD deviations and overlay errors. We propose a method including design constraints, where results of different measurement steps are not judged individually, but in a combined way. We illustrate this with a critical design feature consisting of a contact requiring minimum distance to a neighboring metal line, resulting in much better correlation to yield than traditional methods.
Carsten Hartig, Bernd Schulz, Robert Melzer, Matthias Ruhm, Daniel Fischer, Stefan Buhl, Boris Habets, Martin Rößiger, and Manuela Gutsch, "Combined process window monitoring for critical features," Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450U (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 28 March 2017); https://doi.org/10.1117/12.2259910.
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