With photolithography as the fundamental patterning step in the modern nanofabrication process, every wafer within a semiconductor fab will pass through a lithographic apparatus multiple times. With more than 20,000 sensors producing more than 700GB of data per day across multiple subsystems, the combination of a light source and lithographic apparatus provide a massive amount of information for data analytics. This paper outlines how data analysis tools and techniques that extend insight into data that traditionally had been considered unmanageably large, known as adaptive analytics, can be used to show how data collected before the wafer is exposed can be used to detect small process dependent wafer-towafer changes in overlay.
Emil Schmitt-Weaver, Venky Subramony, Zakir Ullah, Masazumi Matsunobu, Ravin Somasundaram, Joel Thomas, Linmiao Zhang, Klaus Thul, Kaustuve Bhattacharyya, Ronald Goossens, Cees Lambregts, Wim Tel, and Chris de Ruiter, "Computational overlay metrology with adaptive data analytics," Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450V (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 28 March 2017); https://doi.org/10.1117/12.2258039.
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