General approaches to realize higher sensitivity in optical inspection system are using shorter wavelength including UV and higher NA for objective lens. Extreme performances of imaging and illumination systems in a situation of wellmatched to each other are inevitable for the further effort on an effective optical detection of fine defects in patterned wafer. This study focused on the dark field illumination systems satisfying hi areal uniformity and concentration efficiency for the specific conditions of non-symmetric illumination area and critical slanted angle. Three different types of anamorphic dark field illumination systems namely, Far-field Areal Illumination (FAI), Near-field Areal Illumination (NAI) and Farfield Linear Illumination (FLI), are designed and evaluated by brightness, uniformity and concentration efficiency of beam intensity.
Woojun Han, Sunseok Yang, Ohhyung Kwon, Seungyong Chu, Seungchul Oh, Woosung Jung, and Jaisoon Kim, "Anamorphic approach for developing hi-efficiency illumination system to inspect defects on semiconductor wafers," Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014517 (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 28 March 2017); https://doi.org/10.1117/12.2258162.
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