The availability of metrology solutions, one of the key factors to drive leading edge semiconductor devices and processes, can be confronted with difficulties in the advanced node. For developing new metrology solutions, high quality test structures fabricated at specific sizes are needed. Conventional resist-based lithography have been utilized to manufacture such samples. However, it can encounter significant resolution difficulties or requiring complicated optimization process for advanced technology node. In this work, potential of helium ion beam direct milling (HIBDM) for fabricating metrology test structures with programmed imperfection is investigated. Features down to 5 nm are resolvable without implementing any optimization method. Preliminary results have demonstrated that HIBDM can be a promising alternative to fabricate metrology test structures for advanced metrology solutions in sub 10 nm node.
Chien-Lin Lee, Sheng-Wei Chien, Sheng-Yung Chen, Chun-Hung Liu, Kuen-Yu Tsai, Jia-Han Li, Bor-Yuan Shew, Chit-Sung Hong, and Chao-Te Lee, "Fabrication of metrology test structures with helium ion beam direct write," Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014519 (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 28 March 2017); https://doi.org/10.1117/12.2257989.
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