Sidewall image transfer has become a key enabler of future design shrink. It is consisted of several process steps that multiply the number of lithography backbone patterns in a self-aligned form, shrinking pattern and pitch sizes. The quality of the image transfer process depends on the characteristics of the sidewall pattern morphology. Rectangular Sidewalls with a flat top and vertical edges will result with symmetrical and uniform etched image. On the other hand, Facet top, bent sidewalls, sloped edges or foot, may distort the etched image. In this paper we present a description of the 3DSEM metrology technique used, simulation results, and demonstrate three dimensional characterization of Sidewalls pattern fabricated with different etch recipes: Top Facet measurements vs cross section images; Edge slop and foot characterization
Shimon Levi, "3D SEM characterization of advanced sidewall patterning process (Conference Presentation)," Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451M (Presented at SPIE Advanced Lithography: March 02, 2017; Published: 28 April 2017); https://doi.org/10.1117/12.2258101.5402356015001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon