The focused ion beam (FIB) has become an important tool for micro- and nanostructuring of samples such as milling, deposition and imaging. However, this leads to damage of the surface on the nanometer scale from implanted projectile ions and recoiled material atoms. It is therefore important to investigate each kind of damage quantitatively. We present a dynamic Monte-Carlo (MC) simulation code to simulate the morphological and compositional changes of a multilayered sample under ion irradiation and a molecular dynamics (MD) simulation code to simulate dose-dependent changes in the backscattering-ion (BSI)/secondary-electron (SE) yields of a crystalline sample. Recent progress in the codes for research to simulate the surface morphology and Mo/Si layers intermixing in an EUV lithography mask irradiated with FIBs, and the crystalline orientation effect on BSI and SE yields relating to the channeling contrast in scanning ion microscopes, is also presented.
Kaoru Ohya, "Molecular dynamics and dynamic Monte-Carlo simulation of irradiation damage with focused ion beams," Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451V (Presented at SPIE Advanced Lithography: March 02, 2017; Published: 28 March 2017); https://doi.org/10.1117/12.2256624.
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