Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure
Ke Du, Meiliana Siauw, David Valade, Marek Jasieniak, Nico Voelcker, Peter Trefonas, Jim Thackeray, Idriss Blakey, and Andrew Whittaker, "Embedded top-coat for reducing the effect out of band radiation in EUV lithography," Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460D (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 27 March 2017); https://doi.org/10.1117/12.2270480.
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