The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction can be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.
William Earley, Deanna Soucie, Kenji Hosoi, Arata Takahashi, Takashi Aoki, Brian Cardineau, Koichi Miyauchi, Jay Chun, Michael O'Sullivan, and Robert Brainard, "Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography," Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460H (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 18 April 2017); https://doi.org/10.1117/12.2258324.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 12,000 conference presentations, including many plenary and keynote presentations.