Inpria metal-oxide photoresist (PR) serves as a thin spin-on patternable hard mask for EUV lithography. Compared to traditional organic photoresists, the ultrathin metal-oxide photoresist (~12nm after development) effectively mitigates pattern collapse. Because of the high etch resistance of the metal-oxide resist, this may open up significant scope for more aggressive etches, new chemistries, and novel integration schemes. We have previously shown that metal-oxide PR can be successfully used to pattern the block layer for the imec 7-nm technology node and advantageously replace a multiple patterning approach, which significantly reduces the process complexity and effectively decreases the cost. We also demonstrated the formation of 16nm half pitch 1:1 line/space with EUV single print, which corresponds to a metal 2 layer for the imec 7-nm technology node. In this paper, we investigate the feasibility of using Inpria’s metal-oxide PR for 16nm line/space patterning. In meanwhile, we also explore the different etch process for LWR smoothing, resist trimming and resist stripping.
Ming Mao, Frederic Lazzarino, Peter De Schepper, Danilo De Simone, Daniele Piumi, Vinh Luong, Fumiko Yamashita, Michael Kocsis, and Kaushik Kumar, "Patterning with metal-oxide EUV photoresist: patterning capability, resist smoothing, trimming, and selective stripping," Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460I (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 27 March 2017); https://doi.org/10.1117/12.2258118.
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