Successful pattern transfer from the photoresist into the substrate depends on robust layers of lithographic films. Typically, an alternating sequence of inorganic (most often Si containing) and organic hardmask (HM) materials is used. Pattern transfer occurs then by using reactive ion etch (RIE) chemistry that is selective to one particular layer (such as: flurorinated RIE for Si HM). The impact of these RIE gases onto the layers acting as hardmask for the layer to be etched is typically neglected, except for known sputtering effects. We found that components of the RIE gases can penetrate deep into the “inert” layers and significantly modify them. For example, nitrogen used as component to etch spin-on carbon layers was found to travel up to 70 nm deep into Si HM materials and create layers with different material properties within this film. The question is being raised and discussed to which extent this atom implantation may impact the pattern transfer of the ever shrinking features.
M. Glodde, R. L. Bruce, M. J. P. Hopstaken, M. R. Saccomanno, N. Felix, K. E. Petrillo, and B. Price, "Unexpected impact of RIE gases on lithographic films," Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460J (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 27 March 2017); https://doi.org/10.1117/12.2258012.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 14,000 conference presentations, including many plenary and keynote presentations.