In this work, we explore the performances of a low-temperature PEALD technology used to trim/clean/smooth and reshape ArF photoresist lines that could subsequently receive an in-situ spacer deposition required to build up any SAxP grating. Different gas mixtures (O2, N2, H2, Ar and combinations) are evaluated on both blanket and patterned wafers. Trim rate, line profile, surface roughness and chemical modification are characterized using ellipsometry, Fourier transform infrared spectroscopy and atomic force microscopy. The photoresist line roughness is measured from top down SEM imaging and the different contributors to the roughness determined from a Power Spectral Density (PSD) analysis. Few results obtained on EUV photoresist blanket wafers using similar plasma treatments will also be briefly presented.
Frederic Lazzarino, Sara Paolillo, Anthony Peter, David De Roest, TaeGeun Seong, Yizhi Wu, Stefan Decoster, Vito Rutigliani, Gian Francesco Lorusso, Vassilios Constantoudis, Sven Van Elshocht, Daniele Piumi, and Kathy Barla, "Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist," Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460K (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 27 March 2017); https://doi.org/10.1117/12.2258040.
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