For fine patterning, there are two possible hard mask integration schemes: quad-layer and tri-layer systems. Due to the different structures and processes between quad- and tri- layer systems, each system needs specific chemical and physical properties of the hard mask. In this paper, we report the properties of the carbon-based spin-on hard mask (CSOH) candidates for various hard mask integrations.
Yushin Park, Seungwook Shin, Yunjun Kim, Seunghyun Kim, Jaebum Lim, Sung Hwan Kim, Hyeonil Jung, Chungheon Lee, Miyeon Han, Sanghak Lim, and Jeong Yun Yu, "Investigation on spin-on hard mask integration," Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014616 (Presented at SPIE Advanced Lithography: March 02, 2017; Published: 27 March 2017); https://doi.org/10.1117/12.2257846.
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