In this paper proof-of-principle demonstrations of spin-on carbon (SOC)/spin-on glass (SOG)-based lithography processes which could replace standard patterning stacks within the FEOL for upcoming advanced nodes like N10/N7 are presented. At these dimensions the standard lithography approaches that have been utilized within the previous nodes will begin to run into fundamental limitations as a result of the extremely high aspect ratios of the device topography, requiring both new materials as well as new patterning flows in order to allow for continued device scaling. Here, novel SOC/SOG-based patterning flows have been demonstrated which could be applied to implement Source Drain Extension implantations and epitaxial growth processes for CMOS FinFET device architectures even down at N10/N7 dimensions.
Toby Hopf, Monique Ercken, Geert Mannaert, Eddy Kunnen, Zheng Tao, Nadia Vandenbroeck, Farid Sebaai, Yoshiaki Kikuchi, Hans Mertens, Stefan Kubicek, Steven Demuynck, and Naoto Horiguchi, "CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks," Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014618 (Presented at SPIE Advanced Lithography: March 02, 2017; Published: 27 March 2017); https://doi.org/10.1117/12.2257668.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon