Shrinking pattern sizes dictate that scanner-to-scanner variations for HVM products shrink proportionally. This paper shows the ability to identify (a subset of) root causes for mismatch between ArF immersion scanners using scanner metrology. The root cause identification was done in a Samsung HVM factory using a methodology (Proximity Matching Budget Breakdown or PromaBB) developed by ASML. The proper identification of root causes-1 helps to select what combination of scanner control parameters should be used to reduce proximity differences of critical patterns while minimizing undesirable side effects from cross-compensation. Using PromaBB, the difference between predicted and measured CD mismatch was below 0.2nm. PromaBB has been proposed for HVM implementation at Samsung in combination with other ASML fab applications: Pattern Matcher Full Chip (PMFC), Image Tuner and FlexWave.
Du Hyun Beak, Ju Hee Shin, Tony Park, Dong Kyeng Han, Jin Phil Choi, Jeong Heung Kong, Young Seog Kang, Se Yeon Jang, Peter Nikolsky, Chris Strolenberg, Noh-Kyoung Park, Khalid Elbattay, Vito Tomasello, Austin Peng, Anand Guntuka, Zhao-Ze Li, Ronald Goossens, Machi Ryu, Jangho Shin, Chung-Yong Kim, Andrew Moe, and Yun-A Sung, "Scanner-to-scanner CD analysis and control in an HVM environment," Proc. SPIE 10147, Optical Microlithography XXX, 101470A (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2258339.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon