The effects of photoresist sidewall profile and LER on two representative integration schemes were studied through 3D
virtual fabrication: Front-End of Line (FEOL) Fin formation and Back-End of Line (BEOL) Metal line definition. Both
of these processes use self-aligned double patterning (SADP) in pattern definition, and affect the circuit performance
through MOSFET channel shape and parasitic capacitance respectively. In both cases we imposed LER and sidewall
roughness on the photoresist that defines the mandrel at the initial step of the SADP flow using SEMulator3D. The LER
followed a Gaussian correlation function for a number of amplitude and correlation length values. The sidewall profile
emulated the bulb-shaped pattern that is reported in experimental works. The taper angle and roughness amplitude of this
shape were varied to isolate its components. In each of these cases, we have found direct evidence of resist sidewall
profile impact on variability degradation in CD and electrical performance. Special care should be placed on controlling
resist profile through optimization of exposure and development schemes.
Mustafa B. Akbulut, Jiangjiang Gu, Andras Pap, Vasanth Allampalli, Daniel Faken, Joseph Ervin, Ken Greiner, and David Fried, "Investigation of 3D photoresist profile effect in self-aligned patterning through virtual fabrication," Proc. SPIE 10147, Optical Microlithography XXX, 101470G (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 24 March 2017); https://doi.org/10.1117/12.2258157.
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