In this paper, we present a design technology co-optimization (DTCO) flow to pattern self-aligned via (SAV) using two
masks with grapho-epitaxy of lamella BCP and 193i for sub-7nm design. We show that it is necessary to consider both
metal and via layers at the same time in creating design rules with process variations. Due to lamella DSA’s own
characteristics, it can be easily applied in dense memory or SRAM applications for SAV patterning using traditional
single-material metal hard mask. However, to achieve two-mask SAV solution for logic applications, we need to apply
alternating hard mask in metal to cut lamella DSA patterns without compromising the technology scaling.
Yuansheng Ma, Jongwook Kye, Gurdaman S. Khaira, Le Hong, James Word, Yuyang Sun, Joydeep Mitra, J. Andres Torres, Germain Fenger, and Harry J. Levinson, "Design technology co-optimization (DTCO) study on self-aligned-via (SAV) with Lamella DSA for sub-7 nm technology," Proc. SPIE 10148, Design-Process-Technology Co-optimization for Manufacturability XI, 101480B (Presented at SPIE Advanced Lithography: March 02, 2017; Published: 30 March 2017); https://doi.org/10.1117/12.2258056.
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