imec’s DTCO and EUV achievement toward imec 7nm (iN7) technology node which is industry 5nm node
equivalent is reported with a focus on cost and scaling. Patterning-aware design methodology supports both
iArF multiple patterning and EUV under one compliant design rule. FinFET device with contacted poly pitch of
42nm and metal pitch of 32nm with 7.5-track, 6.5-track, and 6-track standard cell library are explored. Scaling
boosters are used to provide additional scaling and die cost benefit while lessening pitch shrink burden, and it
makes EUV insertion more affordable. EUV pattern fidelity is optimized through OPC, SMO, M3D, mask
sizing and SRAF. Processed wafers were characterized and edge-placement-error (EPE) variability is validated
for EUV insertion. Scale-ability and cost of ownership of EUV patterning in aligned with iN7 standard cell
design, integration and patterning specification are discussed.
Ryoung-han Kim, Julien Ryckaert, Praveen Raghavan, Yasser Sherazi, Peter Debacker, Darko Trivkovic, Werner Gillijns, Ling Ee Tan, Youssef Drissi, Victor Blanco, Joost Bekaert, Ming Mao, Stephane Larivière, and Greg McIntyre, "Design and pitch scaling for affordable node transition and EUV insertion scenario," Proc. SPIE 10148, Design-Process-Technology Co-optimization for Manufacturability XI, 101480V (Presented at SPIE Advanced Lithography: March 03, 2017; Published: 26 April 2017); https://doi.org/10.1117/12.2257885.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon