Phase change material (PCM)-based memory cells have shown promise as an enabler for low power, high density memory. There is a current need to develop and improve patterning strategies to attain smaller device dimensions. In this work, two methods of patterning of PCM device structures was achieved using directed self-assembly (DSA) patterning: the formation of a high aspect ratio pore designed for atomic layer deposition (ALD) of etch damage-free PCM, and pillar formation by image reversal and plasma etch transfer into a PCM film. We show significant CD reduction (180 nm to 20 nm) of a lithographically defined hole by plasma etch shrink, DSA spin-coat and subsequent high selectivity pattern transfer. We then demonstrate structural fabrication of both DSA-defined SiN pores with ALD PCM and DSA-defined PCM pillars. Challenges to both pore and pillar fabrication are discussed.
Robert L. Bruce, Gloria Fraczak, John M. Papalia, HsinYu Tsai, Matt BrightSky, Hiroyuki Miyazoe, Yu Zhu, Sebastian U. Engelmann, Hsiang-Lan Lung, Takeshi Masuda, Koukou Suu, Chi-Chun Liu, Hao Tang, John C. Arnold, Nelson Felix, and Chung H. Lam, "Directed self-assembly patterning strategies for phase change memory applications," Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490J (Presented at SPIE Advanced Lithography: February 28, 2017; Published: 21 March 2017); https://doi.org/10.1117/12.2257829.
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