In the lithography landscape, EUV technology recovered some credibility recently. However, its large adoption remains uncertain. Meanwhile, 193nm immersion lithography, with multiple-patterning strategies, supports the industry preference for advanced-node developments. In this landscape, lithography alternatives maintain promise for continued R&D. Massively parallel electron-beam and nano-imprint lithography techniques remain highly attractive, as they can provide noteworthy cost-of-ownership benefits. Directed self-assembly lithography shows promising resolution capabilities and appears to be an option to reduce multi-patterning strategies. Even if large amount of efforts are dedicated to overcome the lithography side issues, these solutions introduce also new challenges and opportunities for the integration schemes.
S. Landis, H. Teyssedre, G. Claveau, I. Servin, F. Delachat, M. L. Pourteau, A. Gharbi, P. Pimenta Barros, R. Tiron, L. Nouri, N. Possemé, M. May, P. Brianceau, S. Barnola, Y. Blancquaert, J. Pradelles, P. Essomba, A. Bernadac, B. Dal'zotto, S. Bos, M. Argoud, G. Chamiot-Maitral, A. Sarrazin, C. Tallaron, C. Lapeyre, and L. Pain, "Nanoimprint, DSA, and multi-beam lithography: patterning technologies with new integration challenges," Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490K (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 10 April 2017); https://doi.org/10.1117/12.2259966.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon