This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors. Atomic layer etching suitable for controllable recess etching in GaN power transistors will be discussed. In addition, plasma based surface passivation techniques will be reviewed for a variety of compound semiconductor materials ((100) and (110) oriented InGaAs and InGaSb).
Iain Thayne, Xu Li, David Millar, Yen-Chun Fu, and Uthayasankararan Peralagu, "Plasma processing of III-V materials for energy efficient electronics applications," Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490R (Presented at SPIE Advanced Lithography: March 01, 2017; Published: 21 March 2017); https://doi.org/10.1117/12.2257863.
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