GaSb and its heterostructures grown by molecular beam epitaxy (MBE) have received much attention given their application in a wide range of mid-wave and long-wave IR photodetector applications. With the maturation of the MBE growth process, focus is now turned to improving manufacturing readiness and the transition to the production of large-format wafers. We will discuss the transition from the development of early detector layer structures on 2” diameter GaSb substrates, through today’s 3”/4” production standard, and to the onset of 5” pilot production from the perspective of volume compound semiconductor manufacturing. We will report on the growth of 5” GaSb-based MWIR nBn detector structures using a large format 5×5” production MBE platform. Structural and optical properties, as well as electrical data from large-area mesa diodes will be presented and compared with results achieved with smaller batch size MBE reactor platform.
Dmitri Loubychev, Joel M. Fastenau, Michael Kattner, Phillip Frey, Amy W. K. Liu, and Mark J. Furlong, "Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy," Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017718 (Presented at SPIE Defense + Security: April 11, 2017; Published: 16 May 2017); https://doi.org/10.1117/12.2263962.
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